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| FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET October 2006 FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET 20V, 4A, Q1:68m, Q2:100m Features Q1: N-Channel Max rDS(on) = 68m at VGS = 4.5V, ID = 4A Max rDS(on) = 100m at VGS = 2.5V, ID = 3A Q2: N-Channel Max rDS(on) = 100m at VGS = 4.5V, ID = 4A Max rDS(on) = 150m at VGS = 2.5V, ID = 2A Low gate Charge RoHS Compliant tm General Description FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Application DC - DC Conversion Up S1 D1/S2 D2 Bottom G1 D1/S2 G2 D2 4 3 G2 D1 D2 D1/S2 5 S1 2 D1/S2 G1 G1 D1/S2 G2 Power 33 S1 D1/S2 D2 6 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation (Steady State) Q1 Power Dissipation (Steady State) Q2 Operating and Storage Junction Temperature Range (Note 1a) Q1 20 12 4 10 1.92 1.78 -55 to +150 Q2 20 12 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Q1 Q2 (Note 1a) 65 70 C/W Package Marking and Ordering Information Device Marking 6890N Device FDMC6890NZ Package Power 33 Reel Size 7inch Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMC6890NZ Rev.C 1 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 16V, VGS = 0V VGS = 12V, VDS= 0V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 20 13 12 1 1 10 100 V mV/C A A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 2A VDS = V, ID =4A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.6 0.6 0.9 1.0 -3 -3 58 77 67 102 10 7 68 100 100 150 2 2 V mV/C m gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance f = 1MHz VDS = 10V, VGS = 0V, f= 1MHZ Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 205 190 60 60 40 35 3.3 2.8 270 250 80 80 60 55 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(2) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 4.5V Total Gate Charge at 2V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 4.5V VDD = 10 V ID = 4A VDD = 10V, ID = 4A, RGEN = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 4 4 13 12 10 7 6 6 2.4 1.8 1.4 0.6 0.4 0.5 0.9 0.8 10 10 22 21 19 14 12 12 3.4 2.6 1.9 0.8 ns ns ns ns nC nC nC nC FDMC6890NZ Rev.C 2 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 4A Reverse Recovery Time IF = 4A, di/dt = 100A/s Reverse Recovery Charge Q1 Q2 Q1 Q2 Q1 Q2 0.94 0.92 18 17 9 10 1.25 1.25 27 26 14 15 V ns nC Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 65C/W when mounted on a 1 in2 pad of 2 oz copper b. 150C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMC6890NZ Rev.C 3 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted 12 10 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 2.5V 3.0 2.5 VGS = 1.8V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 8 6 4 2 0 0.0 2.0 VGS = 2.5V 1.5 1.0 0.5 VGS = 4.5V VGS = 1.8V 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 0 2 4 6 8 ID, DRAIN CURRENT(A) 10 12 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = 4A VGS = 4.5V ID = 4A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 160 TJ = 150oC 120 80 TJ = 25oC 40 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 3. Normalized On - Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 20 10 9 8 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V ID, DRAIN CURRENT (A) 7 6 5 4 3 2 1 0 0.0 TJ TJ = 150oC TJ = 25oC = -55oC 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0.5 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC6890NZ Rev.C 4 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDD = 10V VDD = 12V VDD = 8V 400 Ciss CAPACITANCE (pF) 100 Coss f = 1MHz VGS = 0V Crss 20 0.1 Qg, GATE CHARGE(nC) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 10 ID, DRAIN CURRENT (A) 100us 6 IAS, AVALANCHE CURRENT(A) 5 4 3 TJ = 25oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 1ms 10ms 100ms 1s 10s DC 2 TJ = 125oC 0.1 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 0.01 0.1 1 10 60 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area FOR TEMPERATURES VGS = 10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 TA = 25oC 10 1 0.5 -4 10 10 -3 SINGLE PULSE 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMC6890NZ Rev.C 5 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 SINGLE PULSE 0.006 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC6890NZ Rev.C 6 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics (Q2 N-Channel) 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5V 3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 8 6 4 2 0 0.0 2.5 2.0 1.5 VGS = 1.8V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 2.5V VGS = 2.5V VGS = 4.5V VGS = 1.8V 1.0 0.5 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 0 2 4 6 8 ID, DRAIN CURRENT(A) 10 12 Figure 13. On Region Characteristics Figure 14. Normalized on-Resistance vS Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = 4A VGS = 4.5V ID = 4A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 160 TJ = 150oC 120 TJ = 25oC 80 40 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 15. Normalized On Resistance vs Junction Temperature Figure 16. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) 6 5 4 3 2 1 TJ = -55oC TJ = 150oC TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 10 VGS = 0V ID, DRAIN CURRENT (A) 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3.0 1E-3 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 17. Transfer Characteristics Figure 18. Source to Drain Diode Forward Voltage vs Source Current FDMC6890NZ Rev.C 7 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics VGS, GATE TO SOURCE VOLTAGE(V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.4 0.8 1.2 1.6 2.0 VDD = 12V VDD = 10V VDD = 8V 400 Ciss CAPACITANCE (pF) 100 Coss f = 1MHz VGS = 0V Crss 20 0.1 Qg, GATE CHARGE(nC) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs Drain to Source Voltage 20 10 ID, DRAIN CURRENT (A) 6 IAS, AVALANCHE CURRENT(A) 5 4 3 TJ = 25oC 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 1ms 10ms 100ms 1s 10s DC 2 TJ = 125oC 0.1 1 1E-3 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 1 0.01 0.1 1 10 60 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 21. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 22. Forward Bias Safe Operating Area 200 100 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 TA = 25oC 10 SINGLE PULSE 1 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 23. Single Pulse Maximum Power Dissipation FDMC6890NZ Rev.C 8 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 1E-3 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 24. Transient Thermal Response Curve FDMC6890NZ Rev.C 9 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET FDMC6890NZ Rev.C 10 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FDMC6890NZ Rev. C 11 www.fairchildsemi.com |
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